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产品分类： mos管

The NCE8580 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications.

订购热线： 400-788-7770

跟此产品相关的产品

: 龙腾N渠道650V,20A超级MOS管--LND20N65/LNB20N65; Power MOSFET is fabricated using the VDSS advanced planer VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalanche energy.

: 龙腾N渠道650V,7A超级MOS管--LND7N65D; The Power MOSFET is fabricated using the advanced planar VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalance energy.

: 龙腾N渠道650V,16A超级MOS管--LND16N65; Power MOSFET is fabricated using the VDSS advanced planer VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalanche energy.

产品详情

NCE N-Channel Enhancement Mode Power MOSFET

Modle ： NCE8580

一、Description

The NCE8580 uses advanced trench technology and design to provide excellent R _DS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications.

二、General Features

l V _DS =85V,I _D =80A

R _DS(ON) <8.5m @ V =10V (Typ:6.8m)

l High density cell design for ultra low Rdson

l Fully characterized avalanche voltage and current

l Good stability and uniformity with high E _AS

l Excellent package for good heat dissipation

l Special process technology for high ESD capability

l Special designed for convertors and power controls

三、Application

l Power switching application

l Hard switched and High frequency circuits

l Uninterruptible power supply

四、Package Marking And Ordering Information

NCE8580 封装和订购信息

五、Absolute Maximum Ratings (T =25unless otherwise noted)

全国咨询热线：400-788-7770

销售部电话：0769-81150556

工程部电话：0769-85638990 手机：18923224605 叶小姐

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跟此产品相关的产品

: 龙腾N渠道650V,20A超级MOS管--LND20N65/LNB20N65; Power MOSFET is fabricated using the VDSS advanced planer VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalanche energy.

: 龙腾N渠道650V,7A超级MOS管--LND7N65D; The Power MOSFET is fabricated using the advanced planar VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalance energy.

: 龙腾N渠道650V,16A超级MOS管--LND16N65; Power MOSFET is fabricated using the VDSS advanced planer VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalanche energy.