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产品分类： mos管

The NCE60P50 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is well suited for high current load applications.

订购热线： 400-788-7770

跟此产品相关的产品

: 龙腾N渠道650V,20A超级MOS管--LND20N65/LNB20N65; Power MOSFET is fabricated using the VDSS advanced planer VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalanche energy.

: 龙腾N渠道650V,7A超级MOS管--LND7N65D; The Power MOSFET is fabricated using the advanced planar VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalance energy.

: 龙腾N渠道650V,16A超级MOS管--LND16N65; Power MOSFET is fabricated using the VDSS advanced planer VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalanche energy.

产品详情格书下载

NCE N-Channel Enhancement Mode Power MOSFET

Modle ： NCE60P50

一、Description

The NCE60P50 uses advanced trench technology and design to provide excellent R _DS(ON) with low gate charge. This device is well suited for high current load applications.

二、General Features

l V _DS =-60V,I _D =-50A

R _DS(ON) <28m @ V =-10V (Typ:5.8m)

l High density cell design for ultra low Rdson

l Fully characterized avalanche voltage and current

l Good stability and uniformity with high E

l Excellent package for good heat dissipation

三、Application

l Load switch

四、Package Marking And Ordering Information

NCE60P50 封装和订购信息

五、Absolute Maximum Ratings (T =25unless otherwise noted)

NCE60P50 最大参数

全国咨询热线：400-788-7770

销售部电话：0769-81150556

工程部电话：0769-85638990 手机：18923224605 叶小姐

邮箱：[email protected] QQ：1923681612 传真：0769-83351643

总部地址：东莞市大岭山镇矮岭冚村沿河东街8号

佛山办事处：佛山市顺德区容桂镇细滘德宝北路合安街19号

中铭官网： www.bsnbp.sbs

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跟此产品相关的产品

: 龙腾N渠道650V,20A超级MOS管--LND20N65/LNB20N65; Power MOSFET is fabricated using the VDSS advanced planer VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalanche energy.

: 龙腾N渠道650V,7A超级MOS管--LND7N65D; The Power MOSFET is fabricated using the advanced planar VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalance energy.

: 龙腾N渠道650V,16A超级MOS管--LND16N65; Power MOSFET is fabricated using the VDSS advanced planer VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalanche energy.