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产品分类: mos管
    The UTC 10N60K is an N-channel Power MOSFET using UTC`s advanced technology to provide customers a minimum on-state resistance and superior switching performance, etc. The UTC 10N60K is generally applied in high efficient DC to DC converters, PWM motor controls and bridge circuits, etc.
    订购热线: 400-788-7770
    龙腾N渠道650V,20A超级MOS管--LND20N65/LNB20N65
    龙腾N渠道650V,20A超级MOS管--LND20N65/LNB20N65
    Power MOSFET is fabricated using the VDSS advanced planer VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalanche energy.
    龙腾N渠道650V,7A超级MOS管--LND7N65D
    龙腾N渠道650V,7A超级MOS管--LND7N65D
    The Power MOSFET is fabricated using the advanced planar VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalance energy.
    龙腾N渠道650V,16A超级MOS管--LND16N65
    龙腾N渠道650V,16A超级MOS管--LND16N65
    Power MOSFET is fabricated using the VDSS advanced planer VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalanche energy.

      POWER MOSFET

      MODEL: 10N60K

      一、DESCRIPTION

      The UTC 10N60K is an N-channel Power MOSFET using UTC`s advanced technology to provide customers a minimum on-state resistance and superior switching performance, etc.

      The UTC 10N60K is generally applied in high efficient DC to DC converters, PWM motor controls and bridge circuits, etc.

      二、FEATURES

      * RDS(ON) <1.2 @ VGS =10V

      * Low Gate Charge (Typical 90nC)

      * Low CRSS ( typical 18 pF)

      * High Switching Speed

      * Improved dv/dt capability

      三、SYMBOL/PACKAGE

      UTC MOS管 10N60K封装图

      四、ORDERING INFORMATION

      UTC MOS管 10N60K订购信息

      五、MARKING

      UTC MOS管 10N60K命名规则

      六、ABSOLUTE MAXIMUM RATINGS

      UTC MOS管 10N60K极限参数

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      龙腾N渠道650V,20A超级MOS管--LND20N65/LNB20N65
      龙腾N渠道650V,20A超级MOS管--LND20N65/LNB20N65
      Power MOSFET is fabricated using the VDSS advanced planer VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalanche energy.
      龙腾N渠道650V,7A超级MOS管--LND7N65D
      龙腾N渠道650V,7A超级MOS管--LND7N65D
      The Power MOSFET is fabricated using the advanced planar VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalance energy.
      龙腾N渠道650V,16A超级MOS管--LND16N65
      龙腾N渠道650V,16A超级MOS管--LND16N65
      Power MOSFET is fabricated using the VDSS advanced planer VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalanche energy.

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      全国咨询热线:400-788-7770

      销售电话:0769-81150556
      工程电话:0769-85638990

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      地址:东莞市矮岭冚村沿河东街8号