亚色影库_亚洲导航_亚洲无人区电影在线观看

prev next

POWER MOSFET--2N70

产品分类： mos管

The UTC 2N70 is a high voltage MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.

订购热线： 400-788-7770

跟此产品相关的产品

: 龙腾N渠道650V,20A超级MOS管--LND20N65/LNB20N65; Power MOSFET is fabricated using the VDSS advanced planer VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalanche energy.

: 龙腾N渠道650V,7A超级MOS管--LND7N65D; The Power MOSFET is fabricated using the advanced planar VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalance energy.

: 龙腾N渠道650V,16A超级MOS管--LND16N65; Power MOSFET is fabricated using the VDSS advanced planer VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalanche energy.

产品详情规格书下载

POWER MOSFET

MODEL: 2N70

一、DESCRIPTION

二、FEATURES

* R _DS(ON) = 6.3 @V _GS = 10V

* Ultra Low gate charge (typical 8.1nC)

* Low reverse transfer capacitance (C _RSS = typical 5.0 pF)

* Fast switching capability

* Avalanche energy specified

* Improved dv/dt capability, high ruggedness

三、SYMBOL/PACKAGE

四、ORDERING INFORMATION

五、ABSOLUTE MAXIMUM RATINGS

UTC MOS管 2N70极限参数

全国咨询热线：400-788-7770

销售部电话：0769-81150556

工程部电话：0769-85638990 手机：18923224605 叶小姐

邮箱：[email protected] QQ：1923681612 传真：0769-83351643

总部地址：东莞市大岭山镇矮岭冚村沿河东街8号

佛山办事处：佛山市顺德区容桂镇细滘德宝北路合安街19号

中铭官网： www.bsnbp.sbs

纤纤影视网

* 表示必填 采购：POWER MOSFET--2N70

* 联系人：	请填写您的真实姓名
公司名称：	请填写您的公司名称
联系电话：
* 手机号码：	请填写您的联系电话
电子邮件：
联系地址：
* 采购意向描述：
	请填写采购的产品数量和产品描述，方便我们进行统一备货。
验证码：

跟此产品相关的产品

: 龙腾N渠道650V,20A超级MOS管--LND20N65/LNB20N65; Power MOSFET is fabricated using the VDSS advanced planer VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalanche energy.

: 龙腾N渠道650V,7A超级MOS管--LND7N65D; The Power MOSFET is fabricated using the advanced planar VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalance energy.

: 龙腾N渠道650V,16A超级MOS管--LND16N65; Power MOSFET is fabricated using the VDSS advanced planer VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalanche energy.